Atomic Layer Deposition
Atomic Layer Deposition - Related Videos
14:01
Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition
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Cited by 30 •
2015
Tin sulfide (SnS) is a candidate material for Earth-abundant, non-toxic solar cells. Here, we demonstrate the fabrication procedure of the SnS solar cells employing atomic layer deposition, which yields 4.36% certified power conversion efficiency, and thermal evaporation which yields 3.88%.
09:45
Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition
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Cited by 3 •
2016
This work details the procedures for the growth and characterization of crystalline SrTiO3 directly on germanium substrates by atomic layer deposition. The procedure illustrates the ability of an all-chemical growth method to integrate oxides monolithically onto semiconductors for metal-oxide semiconductor devices.
09:56
Layer-by-layer Collagen Deposition in Microfluidic Devices for Microtissue Stabilization
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Cited by 7 •
2015
The creation of functional microtissues within microfluidic devices requires the stabilization of cell phenotypes by adapting traditional cell culture techniques to the limited spatial dimensions in microdevices. Modification of collagen allows the layer-by-layer deposition of ultrathin collagen assemblies that can stabilize primary cells, such as hepatocytes, as microfluidic tissue models.
11:10
Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
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Cited by 15 •
2018
Thin films (100-1000 Å) of vanadium dioxide (VO2) were created by atomic-layer deposition (ALD) on sapphire substrates. Following this, the optical properties were characterized through the metal-insulator transition of VO2. From the measured optical properties, a model was created to describe the tunable refractive index of VO2.
08:14
Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited
Zn1-xMgxO
0 Views •
Cited by 5 •
2016
Here we present a protocol for synthesizing Zn1-xMgxO/Cu2O heterojunctions in open-air at low temperature via atmospheric pressure spatial atomic layer deposition (AP-SALD) of Zn1-xMgxO on cuprous oxide. Such high quality conformal metal oxides can be grown on a variety of substrates including plastics by this cheap and scalable method.
FAQs
Atomic Layer Deposition relies on surface sites that react with an introduced precursor until the available reactive sites are consumed. Once those sites are occupied, that exposure stops adding material under the cycle conditions. A second precursor then reacts with the prepared surface. This self-limitation makes each cycle controlled and supports repeatable nanoscale thickness adjustment.
Purge steps remove residual gaseous precursor before the next exposure. Separating the reactants prevents unwanted gas-phase reactions, so film formation remains governed by reactions at the surface rather than uncontrolled reactions in the surrounding gas. This separation maintains the cycle’s controlled behavior and helps produce the intended nanoscale interfaces required in engineered thin-film structures.
Repeating the cycle adds another controlled atomic-scale increment, so cycle count provides a way to adjust film thickness without abandoning the same surface-reaction sequence. This approach is useful when an engineering design requires a nanoscale coating thickness and consistent interfaces across a process series. The method therefore links process repetition directly with thickness control.
Conformal coverage allows the coating to remain uniform over complex surfaces rather than concentrating only on easily exposed regions. That capability matters for nanostructured components and semiconductor features, where uneven film thickness can alter interfaces and device integration. By covering intricate geometries consistently, the process supports more predictable performance and reliability in engineered structures.
A cycle begins with exposure of the surface to one gaseous precursor, followed by a purge. A second precursor is then introduced to react with the prepared surface, followed by another purge to separate the reactants. Repeating this alternating sequence builds the film incrementally while limiting gas-phase interactions between the precursor gases.
The method supports dielectric, conductive, and protective films. These categories allow engineers to address different requirements in semiconductor devices, energy systems, optics, and nanostructured components. The appropriate film function depends on the intended application, while the controlled cycle sequence helps establish nanoscale thickness and interfaces relevant to device integration and component performance.
Atomic Layer Deposition is especially useful when a design requires precise thickness control, uniform coverage, or a coating on a complex surface. These requirements occur in semiconductor devices, energy systems, optics, and nanostructured components. Its engineering value comes from controlling nanoscale interfaces, which can influence performance, reliability, and successful integration of the resulting structure.