Epitaxial Growth
Epitaxial Growth - Related Videos
09:45
Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition
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Cited by 3 •
2016
This work details the procedures for the growth and characterization of crystalline SrTiO3 directly on germanium substrates by atomic layer deposition. The procedure illustrates the ability of an all-chemical growth method to integrate oxides monolithically onto semiconductors for metal-oxide semiconductor devices.
08:49
Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
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Cited by 7 •
2014
Various procedures are outlined to prepare atomically defined templates for epitaxial growth of complex oxide thin films. Chemical treatments of single crystalline SrTiO3 (001) and DyScO3 (110) substrates were performed to obtain atomically smooth, single terminated surfaces. Ca2 Nb3 O10- nanosheets were used to create atomically defined templates on arbitrary substrates.
13:05
Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films
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Cited by 1 •
2019
This article describes the growth of epitaxial films of Mg3N2 and Zn3N2 on MgO substrates by plasma-assisted molecular beam epitaxy with N2 gas as the nitrogen source and optical growth monitoring.
10:31
Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Cited by 2 •
2016
Molecular beam epitaxy is used to grow N-polar InAlN-barrier high-electron-mobility transistors (HEMTs). Control of the wafer preparation, layer growth conditions and epitaxial structure results in smooth, compositionally homogeneous InAlN layers and HEMTs with mobility as high as 1,750 cm2/V∙sec.
10:45
In Situ Visualization of Axon Growth and Growth Cone Dynamics in Acute Ex Vivo Embryonic Brain Slice Cultures
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Cited by 4 •
2021
This protocol demonstrates a straightforward and robust method to study in situ axon growth and growth cone dynamics. It describes how to prepare ex vivo physiologically relevant acute brain slices and provides a user-friendly analysis pipeline.
FAQs
Surface migration, nucleation, and ordered buildup determine whether an epitaxial film develops the intended crystal quality. Atoms or molecules move across the heated substrate, then attach at favorable surface sites. Temperature, pressure, and composition govern these events, so engineers control them together to produce reproducible layers with designed electronic or optical behavior.
Lattice matching and interface control are central because the growing layer must accommodate the substrate’s crystallographic arrangement. Engineers can tailor lattice matching, interface structure, layer thickness, and doping to adjust how charge and light behave. These variables allow epitaxial structures to support distinct functions, including junction formation, quantum wells, and controlled optical response.
Both molecular beam epitaxy and chemical vapor deposition can supply the atoms or molecules needed for layer formation. The essential workflow remains controlled deposition onto a heated crystalline substrate, followed by surface migration, nucleation, and buildup. The selected route therefore operates within a broader process window defined by temperature, pressure, and composition.
An engineering workflow starts with a crystalline substrate, heats it, and introduces the chosen atomic or molecular material under controlled deposition conditions. Surface migration and nucleation then initiate layer formation, while continued supply builds thickness. Controlling composition, temperature, and pressure helps align the resulting film with the intended device function.
Epitaxial layers serve as engineered building blocks rather than merely passive coatings. By adjusting thickness, doping, interfaces, and lattice matching, engineers can create p-n junctions, quantum wells, lasers, transistors, and high-performance sensors. Each structure uses controlled material placement to tune electrical or optical behavior, making the process valuable across semiconductor and electronic device design.
In engineering, the main outcome is deliberate control of device properties through thin-film structure. Epitaxial growth links deposition conditions and layer design to electrical and optical performance, while precise interfaces and doping support increasingly compact and efficient devices. This connection makes the process relevant wherever semiconductor components require tailored behavior and tightly controlled material properties.