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JoVE Journal Engineering
Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films
 

Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films

Article doi: 10.3791/59415
May 11th, 2019 • Usage Statistics
1, 1
1Department of Electrical and Computer Engineering, University of Victoria

Summary
Automatic Translation
May 11th, 2019

This article describes the growth of epitaxial films of Mg3N2 and Zn3N2 on MgO substrates by plasma-assisted molecular beam epitaxy with N2 gas as the nitrogen source and optical growth monitoring.

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