Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films

Peng Wu; Thomas Tiedje

doi:10.3791/59415

Journal

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Engineering

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Plasma-Assisted Molecular Beam Epitaxy Growth of Mg₃N₂ and Zn₃N₂ Thin Films

Plasma-Assisted Molecular Beam Epitaxy Growth of Mg<sub>3</sub>N<sub>2</sub> and Zn<sub>3</sub>N<sub>2</sub> Thin Films

JoVE Journal
Engineering
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JoVE Journal Engineering

Plasma-Assisted Molecular Beam Epitaxy Growth of Mg₃N₂ and Zn₃N₂ Thin Films

7,550 Views

•

13:05 min

•

May 11, 2019

DOI:

10.3791/59415-v

DOI:

10.3791/59415-v

•

13:05 min

May 11, 2019

•

7542 Views

Peng Wu¹, Thomas Tiedje¹

¹Department of Electrical and Computer Engineering,University of Victoria

Summary

This article describes the growth of epitaxial films of Mg₃N₂ and Zn₃N₂ on MgO substrates by plasma-assisted molecular beam epitaxy with N₂ gas as the nitrogen source and optical growth monitoring.

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Plasma-Assisted Molecular Beam Epitaxy Growth of Mg₃N₂ and Zn₃N₂ Thin Films

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