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Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films
JoVE Journal
Engineering
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JoVE Journal Engineering
Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films
DOI:

13:05 min

May 11, 2019

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Chapters

  • 00:00Title
  • 00:57MgO Substrate Preparation
  • 01:50Operation of VG V80 MBE
  • 02:13Substrate Loading
  • 04:04Metal Flux Measurements
  • 05:59Nitrogen Plasma
  • 06:51In-situ Laser Light Scattering
  • 08:35Growth Rate Determination
  • 09:13Results
  • 10:46Conclusion

Summary

Automatic Translation

This article describes the growth of epitaxial films of Mg3N2 and Zn3N2 on MgO substrates by plasma-assisted molecular beam epitaxy with N2 gas as the nitrogen source and optical growth monitoring.

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