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Capítulos
- 00:05Título
- 01:57Microscope Setup, Preparation, and Mounting of the High Electron Mobility Transistor Circuit
- 06:37Capacitance Mode Measurements
- 08:05Results: Scanning Charge Accumulation and Capacitance-voltage Spectroscopy of Doped Semiconductors
- 10:17Conclusion
Scanning-probe single-electron capacitance spectroscopy facilitates the study of single-electron motion in localized subsurface regions. A sensitive charge-detection circuit is incorporated into a cryogenic scanning probe microscope to investigate small systems of dopant atoms beneath the surface of semiconductor samples.
