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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Article DOI: 10.3791/56862-v • 10:36 min • April 12th, 2018
April 12th, 2018 •
1, 1, 2, 3,4, 1, 5, 1, 1,5
1Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, 2Materials Sciences Division, Lawrence Berkeley National Laboratory, 3Institute of Scientific and Industrial Research, Osaka University, 4Max Planck Institute for Solid State Research, 5RIKEN Center for Emergent Matter Science (CEMS)

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Here, we present a protocol to control the carrier number in solids by using the electrolyte.

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Electrolyte Gating WS2 Nanodevices Carrier Number Control Electric-field-induced Quantum Phase Transitions Tungsten Disulfide Transistors Electric-field-induced Superconductivity Nanotube Dispersion Isopropyl Alcohol Sonication Spin-coater Silicon/silicon Dioxide Substrate Tungsten Disulfide Flakes
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