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Electric-field Control of Electronic States in WS₂ Nanodevices by Electrolyte Gating

Electric-field Control of Electronic States in WS<sub>2</sub> Nanodevices by Electrolyte Gating

JoVE Journal
Engineering

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JoVE Journal Engineering

Electric-field Control of Electronic States in WS₂ Nanodevices by Electrolyte Gating

Electric-field Control of Electronic States in WS₂ Nanodevices by Electrolyte Gating

11,471 Views

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10:36 min

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April 12, 2018

DOI:

10.3791/56862-v

DOI:

10.3791/56862-v

•

10:36 min

April 12, 2018

•

11439 Views

Feng Qin¹, Toshiya Ideue¹, Wu Shi², Yijin Zhang^3,4, Ryuji Suzuki¹, Masaro Yoshida⁵, Yu Saito¹, Yoshihiro Iwasa^1,5

¹Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics,The University of Tokyo ²Materials Sciences Division,Lawrence Berkeley National Laboratory ³Institute of Scientific and Industrial Research,Osaka University ⁴Max Planck Institute for Solid State Research ⁵RIKEN Center for Emergent Matter Science (CEMS)

Summary

Here, we present a protocol to control the carrier number in solids by using the electrolyte.

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