11,471 Views
•
10:36 min
April 12, 2018
DOI:
10.3791/56862-v
Here, we present a protocol to control the carrier number in solids by using the electrolyte.
15:47
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Related Videos
16190 Views
09:43
Fine-tuning the Size and Minimizing the Noise of Solid-state Nanopores
13465 Views
11:42
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
15421 Views
14:58
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14579 Views
12:20
Fabrication of Carbon Nanotube High-Frequency Nanoelectronic Biosensor for Sensing in High Ionic Strength Solutions
18207 Views
08:52
Characterizing Electron Transport through Living Biofilms
8384 Views
09:14
Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
7684 Views
08:41
Generation and Control of Electrohydrodynamic Flows in Aqueous Electrolyte Solutions
8869 Views
07:12
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
9549 Views
11:25
Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
11108 Views
Read Article
Cite this Article
Qin, F., Ideue, T., Shi, W., Zhang, Y., Suzuki, R., Yoshida, M., Saito, Y., Iwasa, Y. Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating. J. Vis. Exp. (134), e56862, doi:10.3791/56862 (2018).
Download .ris file
Copy
Share Video
.