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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
JoVE Journal
Engineering
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JoVE Journal Engineering
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
DOI:

10:36 min

April 12, 2018

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Chapters

  • 00:04Title
  • 00:38Dispersion of WS2 Nanotubes (NTs) on a Si/SiO2 Substrate
  • 01:35Application of WS2 Flakes to a Si/SiO2 Substrate with the Tape Method
  • 02:28Device Fabrication by Electron Beam Lithography
  • 05:59Electrode Deposition
  • 07:17Device Completion and Transport Measurements
  • 08:31Results: Transistor Operations of WS2 Nanotube and Flake Devices
  • 09:56Conclusion

Summary

Automatic Translation

Here, we present a protocol to control the carrier number in solids by using the electrolyte.

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