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Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
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Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Article DOI: 10.3791/52745-v • 07:50 min • July 17th, 2015
July 17th, 2015 •
1, 2, 3, 3, 1,2
1Department of Materials Science and Engineering, The Ohio State University, 2Department of Electrical and Computer Engineering, The Ohio State University, 3Institute of Materials Research, The Ohio State University

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요약
Automatic Translation

The use of electron channeling contrast imaging in a scanning electron microscope to characterize defects in III-V/Si heteroexpitaxial thin films is described. This method yields similar results to plan-view transmission electron microscopy, but in significantly less time due to lack of required sample preparation.

Tags

Electron Channeling Contrast Imaging ECCI III-V Heteroepitaxial Characterization Misfit Dislocations GaP Si(001) Substrates Scanning Electron Microscope SEM Crystallographic Features Plan-view Transmission Electron Microscopy PV-TEM Sample Preparation High Throughput Characterization Method Selective Imaging GaP/Si Interface Contrast Levels Invisibility Criteria Critical Thickness For Dislocation Nucleation Threading Dislocations Stacking Fault
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