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微波导光衰减法测量半导体中的载波寿命
JoVE Journal
Engineering
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JoVE Journal
Engineering
Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
Please note that all translations are automatically generated.
Click here for the English version.
微波导光衰减法测量半导体中的载波寿命
DOI:
10.3791/59007-v
•
07:38 min
•
April 18, 2019
•
Takato Asada
,
Yoshihito Ichikawa
,
Masashi Kato
2
1
Department of Electrical & Mechanical Engineering
,
Nagoya Institute of Technology
,
2
Frontier Research Institute for Material Science
,
Nagoya Institute of Technology
Chapters
00:04
Title
00:49
Preparation of the Sample and Aqueous Solutions
01:44
Preparation of the Measuring Equipment
03:36
Measurement and Data Processing
05:47
Results: Normalized and Calculated μ-PCD Decay Curves for the n-type 4H-SIC Sample in Air and Aqueous Solutions
06:29
Conclusion
Summary
Automatic Translation
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作为半导体中重要的物理参数之一, 本文采用微波光导性衰减法的协议对载流子寿命进行了测量。
Tags
Carrier Lifetime
Semiconductor
Microwave Photoconductivity Decay
Micro-PCD
4H Silicon Carbide
Aqueous Solution
Pulsed Laser
Photodiode
Oscilloscope
Microwave Waveguide
Schottky Barrier Diode
Gun Diode
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