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Graphène-Assisté Quasi-van der Waals Epitaxy of AlN Film sur substrat saphir nano-modelé pour les diodes électroluminescentes ultraviolettes

Article DOI: 10.3791/60167-v • 07:00 min • June 25th, 2020
June 25th, 2020 •
*1,2, *3, 1,2, 1,2, 2,4, 1,2, 5, 1,2
1State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, 3Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 4State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 5Electron Microscopy Laboratory, School of Physics, Peking University
* These authors contributed equally

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Un protocole pour la croissance assistée par graphène de films AlN de haute qualité sur le substrat de saphir nano-modelé est présenté.

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Ingénierie Numéro 160 graphène MOCVD AlN diodes électroluminescentes ultraviolettes van der Waals épitaxy substrat saphir à motif nano
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