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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Kapitel
- 00:05Titel
- 01:16Sample Preparation for Cryo-cathodoluminescence Experiment
- 02:06Cryo-cathodoluminescence Experiment
- 06:28Performing Cross-correlation Electron Backscatter Diffraction Experiments
- 08:50Results: Cathodoluminenscence and Strain Fields of Extended Defects in Silicon
- 10:19Conclusion
The optical, electrical, and structural properties of dislocations and of grain boundaries in semiconductor materials can be determined by experiments performed in a scanning electron microscope. Electron microscopy has been used to investigate cathodoluminescence, electron beam induced current, and diffraction of backscattered electrons.
