Globalfoundries Fab 1 1 article published in JoVE Engineering In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices Zhongquan Liao1,2, Martin Gall1, Kong Boon Yeap1,3, Christoph Sander1, André Clausner1, Uwe Mühle1, Jürgen Gluch1, Yvonne Standke1, Oliver Aubel4, Armand Beyer4, Meike Hauschildt4, Ehrenfried Zschech1,2 1Fraunhofer Institute for Ceramic Technologies and Systems, 2Dresden Center for Nanoanalysis, Technische Universität Dresden, 3Globalfoundries Fab 8, 4Globalfoundries Fab 1 The time-dependent dielectric breakdown (TDDB) in on-chip interconnect stacks is one of the most critical failure mechanisms for microelectronic devices. This paper demonstrates the procedure of an in situ TDDB experiment in the transmission electron microscope, which opens a possibility to study the failure mechanism in microelectronic products.
