Intel Corporation 2 articles published in JoVE Engineering Use of Sacrificial Nanoparticles to Remove the Effects of Shot-noise in Contact Holes Fabricated by E-beam Lithography Shankar B. Rananavare1, Moshood K. Morakinyo2 1Department of Chemistry, Portland State University, 2Logic Technology Department, Intel Corporation Uniformly sized nanoparticles can remove fluctuations in contact hole dimensions patterned in poly(methyl methacrylate) (PMMA) photoresist films by electron beam (E-beam) lithography. The process involves electrostatic funneling to center and deposit nanoparticles in contact holes, followed by photoresist reflow and plasma- and wet-etching steps. Engineering Using Synchrotron Radiation Microtomography to Investigate Multi-scale Three-dimensional Microelectronic Packages Holly D. Carlton1, John W. Elmer1, Yan Li2, Mario Pacheco2, Deepak Goyal2, Dilworth Y. Parkinson3, Alastair A. MacDowell3 1Materials Engineering Division, Lawrence Livermore National Laboratory, 2Assembly Test and Technology Development Failure Analysis Labs, Intel Corporation, 3Advanced Light Source, Lawrence Berkeley National Laboratory For this study synchrotron radiation micro-tomography, a non-destructive three-dimensional imaging technique, is employed to investigate an entire microelectronic package with a cross-sectional area of 16 x 16 mm. Due to the synchrotron's high flux and brightness the sample was imaged in just 3 min with an 8.7 µm spatial resolution.
