Articles by Ori Hazut in JoVE
Other articles by Ori Hazut on PubMed
Transformation of Organic-inorganic Hybrid Films Obtained by Molecular Layer Deposition to Photocatalytic Layers with Enhanced Activity ACS Nano. Aug, 2012 | Pubmed ID: 22768917 We present the transformation of organic-inorganic hybrid titanicone films formed by TiCl(4) as metal precursor and ethylene glycol (EG) using solvent-free MLD to highly active photocatalytic films. The photocatalytic activities of the films were investigated using hydroxyl-functionalized porphyrin as a spectroscopic marker. TEM imaging and electron diffraction, XPS, UV-vis spectroscopy, and spectroscsopic ellipsometry were employed for structural and composition analyses of the films. The photocatalytic activity of Ti-EG films was investigated for different anneal temperatures and compared to TiO(2) films prepared by ALD using TiCl(4) as metal precursor and H(2)O (TiO(2) films). Overall, our results indicate that the photocatalytic activity of the thermally annealed Ti-EG film is about 5-fold increased compared to that of the TiO(2) film prepared by ALD for optimal process conditions. The combined results indicate that the structural and photocatalytic properties can be assigned to three states: (I) amorphous state, intermediate dye loading, low photocatalytic activity, (II) intermediate film state with both crystalline and amorphous regions, high dye loading, high catalytic activity, and (III) highly crystalline film with low dye loading and low photocatalytic activity. The formation of photocatalytic nanotubes (NTs) is demonstrated using sacrificial Ge nanowires (NWs) scaffolds to yield Ti-EG NT structures with controllable wall thickness structures and enhanced dye loading capacity. Our results demonstrate the feasibility and high potential of MLD to form metal oxides with high photocatalytic activity.
Contact Doping of Silicon Wafers and Nanostructures with Phosphine Oxide Monolayers ACS Nano. Nov, 2012 | Pubmed ID: 23083376 Contact doping method for the controlled surface doping of silicon wafers and nanometer scale structures is presented. The method, monolayer contact doping (MLCD), utilizes the formation of a dopant-containing monolayer on a donor substrate that is brought to contact and annealed with the interface or structure intended for doping. A unique feature of the MLCD method is that the monolayer used for doping is formed on a separate substrate (termed donor substrate), which is distinct from the interface intended for doping (termed acceptor substrate). The doping process is controlled by anneal conditions, details of the interface, and molecular precursor used for the formation of the dopant-containing monolayer. The MLCD process does not involve formation and removal of SiO(2) capping layer, allowing utilization of surface chemistry details for tuning and simplifying the doping process. Surface contact doping of intrinsic Si wafers (i-Si) and intrinsic silicon nanowires (i-SiNWs) is demonstrated and characterized. Nanowire devices were formed using the i-SiNW channel and contact doped using the MLCD process, yielding highly doped SiNWs. Kelvin probe force microscopy (KPFM) was used to measure the longitudinal dopant distribution of the SiNWs and demonstrated highly uniform distribution in comparison with in situ doped wires. The MLCD process was studied for i-Si substrates with native oxide and H-terminated surface for three types of phosphorus-containing molecules. Sheet resistance measurements reveal the dependency of the doping process on the details of the surface chemistry used and relation to the different chemical environments of the P═O group. Characterization of the thermal decomposition of several monolayer types formed on SiO(2) nanoparticles (NPs) using TGA and XPS provides insight regarding the role of phosphorus surface chemistry at the SiO(2) interface in the overall MLCD process. The new MLCD process presented here for controlled surface doping provides a simple yet highly versatile means for achieving postgrowth doping of nanometer scale structures and interfaces.