Articles by Virginia D. Wheeler in JoVE
Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model Marc Currie1, Michael A. Mastro1, Virginia D. Wheeler1 1Naval Research Laboratory Thin films (100-1000 Å) of vanadium dioxide (VO2) were created by atomic-layer deposition (ALD) on sapphire substrates. Following this, the optical properties were characterized through the metal-insulator transition of VO2. From the measured optical properties, a model was created to describe the tunable refractive index of VO2.
Other articles by Virginia D. Wheeler on PubMed
Growth and Spectroscopic Characterization of Monolayer and Few-layer Hexagonal Boron Nitride on Metal Substrates Nanoscale. | Pubmed ID: 25640166 Atomically thin two dimensional hexagonal boron nitride (2D h-BN) is one of the key materials in the development of new van der Waals heterostructures due to its outstanding properties including an atomically smooth surface, high thermal conductivity, high mechanical strength, chemical inertness and high electrical resistance. The development of 2D h-BN growth is still in the early stages and largely depends on rapid and accurate characterization of the grown monolayer or few layers h-BN films. This paper demonstrates a new approach to characterizing monolayer h-BN films directly on metal substrates by grazing-incidence infrared reflection absorption spectroscopy (IRRAS). Using h-BN films grown by atmospheric-pressure chemical vapor deposition on Cu and Ni substrates, two new sub-bands are found for the A2u out-of-plane stretching mode. It is shown, using both experimental and computational methods, that the lower-energy sub-band is related to 2D h-BN coupled with substrate, while the higher energy sub-band is related to decoupled (or free-standing) 2D h-BN. It is further shown that this newly-observed fine structure in the A2u mode can be used to assess, quickly and easily, the homogeneity of the h-BN-metal interface and the effects of metal surface contamination on adhesion of the layer.
Low-loss, Extreme Subdiffraction Photon Confinement Via Silicon Carbide Localized Surface Phonon Polariton Resonators Nano Letters. Aug, 2013 | Pubmed ID: 23815389 Plasmonics provides great promise for nanophotonic applications. However, the high optical losses inherent in metal-based plasmonic systems have limited progress. Thus, it is critical to identify alternative low-loss materials. One alternative is polar dielectrics that support surface phonon polariton (SPhP) modes, where the confinement of infrared light is aided by optical phonons. Using fabricated 6H-silicon carbide nanopillar antenna arrays, we report on the observation of subdiffraction, localized SPhP resonances. They exhibit a dipolar resonance transverse to the nanopillar axis and a monopolar resonance associated with the longitudinal axis dependent upon the SiC substrate. Both exhibit exceptionally narrow linewidths (7-24 cm(-1)), with quality factors of 40-135, which exceed the theoretical limit of plasmonic systems, with extreme subwavelength confinement of (λ(res)3/V(eff))1/3 = 50-200. Under certain conditions, the modes are Raman-active, enabling their study in the visible spectral range. These observations promise to reinvigorate research in SPhP phenomena and their use for nanophotonic applications.