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Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Article DOI: 10.3791/50770-v • 09:45 min • December 2nd, 2013
December 2nd, 2013 •
1,2, 1,2, 1,2, 1,2, 1,2
1Institute of Chemistry, The Hebrew University of Jerusalem, 2Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem

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A detailed procedure for surface doping of Silicon interfaces is provided. The ultra-shallow surface doping is demonstrated by using phosphorus containing monolayers and rapid annealing process. The method can be used for doping of macroscopic area surfaces as well as nanostructures.

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Monolayer Contact Doping Silicon Surfaces Nanowires Organophosphorus Compounds Doping Method Controlled Doping Profiles Nanometer Scale Dopant Source Tetraethyl Methylenediphosphonate Monolayer Silicon Substrate Annealed Sheet Resistance Chemical Vapor Deposition (CVD) Vapor-liquid-solid (VLS) Mechanism Gold Nanoparticles Nanowire Growth Ethanol Suspension Dropcast Silicon Nitride Dielectric Top Layer Phosphorus Doping Photolithography Process Metal Electrodes
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