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Monocouche Contactez-dopage du silicium Surfaces et nanofils utilisant des composés organophosphorés

Published: December 2, 2013 doi: 10.3791/50770

Materials

Name Company Catalog Number Comments
High purity silicon wafers Topsil -
50 nm Si3N4/50 nm SiO2/Si wafers Silicon Valley Microelectronics -
Sulfuric Acid 98% BioLab 19550523
Hydrogen Peroxide 30% J.T. Baker 2190-03
Ammonium Hydroxide 25% J.T. Baker 6051
Ethanol J.T. Baker 8025
Mesitylene Sigma M7200
Dichloromethane Macron 4881-06
Tetraethyl methylenediphosphonate Aldrich 359181
Mineral Oil Sigma M3516
Hydrofluoric Acid 49% J.T. Baker 9564-06
Isopropanol J.T. Baker 9079-05
N-Methyl-2-pyrrolidone J.T. Baker 9397-05
AZ nLOF2020 AZ Electronic Materials nLOF 2020
AZ 726 MIF AZ Electronic Materials 726 MIF
Poly-L-Lysine solution Sigma P8920
Gold colloid solution Ted Pella 82160-80
RTA system AnnealSys MicroAS
4 point probe sheet resistance measurement system Jandel RM3-AR
Mask aligner Suss MA06
e-Beam evaporator VST TFDS-141E
Semiconductor analyzer Agilent B1500A
CVD system - - Home-built

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References

  1. Hazut, O., Agarwala, A., et al. Contact doping of silicon wafers and nanostructures with phosphine oxide monolayers. ACS Nano. 6 (11), 10311-10318 (2012).
  2. Hisamoto, D., Lee, W. -C. FinFET- A self-aligned double-gate MOSFET scalable to 20 nm. IEEE Trans. Electron Devices. 47, 2320-2325 (2000).
  3. Leung, G., Chui, C. O. Variability impact of random dopant fluctuation on nanoscale junctionless FinFETs. IEEE Electron Device Lett. 33, 767-769 (2012).
  4. Ho, J. C., Yerushalmi, R., et al. Wafer-scale, sub-5 nm junction formation by monolayer doping and conventional spike annealing. Nano Lett. 9 (2), 725-730 (2009).
  5. Peercy, P. S. The Drive to Miniaturization. Nature. 406, 1023-1026 (2000).
  6. Lu, W., Lieber, C. M. Semiconductor Nanowires. J. Phys. D. 39, R387-R406 (2006).
  7. Gunawan, O., Wang, K., Fallahazad, B., Zhang, Y., Tutuc, E., Guha, S. High Performance Wire-Array Silicon Solar Cells. Prog. Photovoltaics. 19, 307-312 (2011).
  8. Ho, J. C., Yerushalmi, R., Jacobson, Z. A., Fan, Z., Alley, R. L., Javey, A. Controlled nanoscale doping of semiconductors via molecular monolayers. Nat. Mater. 7, 62-67 (2008).
  9. Koren, E., Rosenwaks, Y., Allen, J. E., Hemesath, E. R., Lauhon, L. J. Nonuniform. Doping distribution along silicon nanowires measured by kelvin probe force microscopy and scanning photocurrent microscopy. Appl. Phys. Lett. 95, 092105 (2009).
  10. Wagner, R. S., Ellis, W. C. The vapor-liquid-solid mechanism of crystal growth and its application to silicon. Trans. Metall. Soc. AIME. 233, 1053-1064 (1965).
  11. Cui, Y., Lauhon, L. J., Gudiksen, M. S., Wang, J., Lieber, C. M. Diameter-controlled synthesis of single-crystal silicon nanowires. Appl. Phys. Lett. 78 (15), 2214-2216 (2001).
Monocouche Contactez-dopage du silicium Surfaces et nanofils utilisant des composés organophosphorés
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Cite this Article

Hazut, O., Agarwala, A., Subramani,More

Hazut, O., Agarwala, A., Subramani, T., Waichman, S., Yerushalmi, R. Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds. J. Vis. Exp. (82), e50770, doi:10.3791/50770 (2013).

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