Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries

12.3K views

Cited by 29

09:51 min

April 22nd, 2013

10.3791/50376-v

April 22nd, 2013

12.3K views

In this work, we describe the use of the atom-probe tomography technique for studying the grain boundaries of the absorber layer in a CIGS solar cell. A novel approach to prepare the atom probe tips containing the desired grain boundary with a known structure is also presented here.

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Atom Probe Tomography

Chapters in this video

0:05

Title

2:29

Sample Fabrication for Atom Probe Tomography Analysis

5:43

Atom Probe Tomography Analysis in a CAMECA LEAP 3000X HR System

6:31

Reconstruction of Atom Probe Tomography Data

7:13

Results: Elemental Maps and Concentration Depth Profiles of a Grain Boundary

8:38

Conclusion

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