Login processing...

Trial ends in Request Full Access Tell Your Colleague About Jove
JoVE Journal
Engineering

A subscription to JoVE is required to view this content.
You will only be able to see the first 20 seconds.

JoVE Journal Engineering
Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries
 

Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries

Article doi: 10.3791/50376
April 22nd, 2013 • Usage Statistics
1, 1, 1, 1, 2, 1
1Department of Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, 2Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg ( ZSW )

Summary
Automatic Translation
April 22nd, 2013

In this work, we describe the use of the atom-probe tomography technique for studying the grain boundaries of the absorber layer in a CIGS solar cell. A novel approach to prepare the atom probe tips containing the desired grain boundary with a known structure is also presented here.

Read Article

Get cutting-edge science videos from JoVE sent straight to your inbox every month.

Waiting X
simple hit counter