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Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries
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Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries

Article DOI: 10.3791/50376 • 09:51 min • April 22nd, 2013
April 22nd, 2013 •
1, 1, 1, 1, 2, 1
1Department of Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, 2Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg ( ZSW )

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In this work, we describe the use of the atom-probe tomography technique for studying the grain boundaries of the absorber layer in a CIGS solar cell. A novel approach to prepare the atom probe tips containing the desired grain boundary with a known structure is also presented here.

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Atom Probe Tomography Cu(In,Ga)Se2 Grain Boundaries Nanoscale Characterization Three-dimensional Analysis APT Sensitivity APT Spatial Resolution APT Tip Preparation Site-specific Sample Preparation Focused-ion-beam Electron Backscatter Diffraction Transmission Electron Microscopy Selected Grain Boundaries Thin-film Solar Cells
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