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Journal / Engineering / 在 Cu(In、Ga)Se2薄膜太阳能电池中制造银纳米线电极与 CdS…
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Engineering

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JoVE Journal Engineering
在 Cu(In、Ga)Se2薄膜太阳能电池中制造银纳米线电极与 CdS 缓冲层之间的强健纳米级接触
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在 Cu(In、Ga)Se2薄膜太阳能电池中制造银纳米线电极与 CdS 缓冲层之间的强健纳米级接触

Article DOI: 10.3791/59909-v • 09:01 min • July 19th, 2019
July 19th, 2019 •
1,2, 2, 3, 3,4, 3,4, 3,4, 3,4, 1,2
1Department of Materials Science and Engineering, Hanbat National University, 2Department of Materials and Manufacturing Engineering, Hanbat National University, 3Photovoltaics Laboratory, Korea Institute of Energy Research, 4Renewable Energy Engineering, University of Science and Technology, Daejeon

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在本协议中,我们描述了在CIGS薄膜太阳能电池中制造银纳米线网络和CdS缓冲层之间强健纳米级接触的详细实验过程。

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工程 问题 149 透明导电电极 银纳米线 太阳能电池 Cu(In,Ga) Se 2 纳米级金属半导体接触 金属半导体芯壳纳米线
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