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通过硅直接晶圆粘接制造均匀纳米级腔
JoVE Journal
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JoVE Journal
Engineering
Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
Please note that all translations are automatically generated.
Click here for the English version.
通过硅直接晶圆粘接制造均匀纳米级腔
DOI:
10.3791/51179-v
•
10:32 min
•
January 09, 2014
•
Stephen R. D. Thomson
,
Justin K. Perron
3
,
Mark O. Kimball
,
Sarabjit Mehta
,
Francis M. Gasparini
1
Department of Physics
,
The State University of New York at Buffalo
,
2
Joint Quantum Institute
,
University of Maryland
,
3
The National Institute of Standards and Technology
,
4
Cryogenics and Fluids Branch
,
NASA Goddard Space Flight Center
,
5
HRL Laboratories
Chapters
00:05
Title
01:54
Bonding Preparation
04:38
Wafer Bonding
08:04
Results: Analysis of Bonded Wafers
09:59
Conclusion
Summary
Automatic Translation
English (Original)
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Automatic Translation
描述了永久粘合两个硅晶片以实现统一外壳的方法。这包括晶圆制备、清洁、RT 粘接和退化过程。由此产生的粘结晶圆(细胞)具有外壳均匀性
~1%1,2。
由此产生的几何形状允许测量封闭的液体和气体。
Tags
Silicon Direct Wafer Bonding
Nanoscale Cavities
Confined 4He
Lambda Transition
Uniform Confinement
Thermal Oxide
Lithographic Patterning
RCA Cleaning
High-temperature Annealing
Thermal And Hydrodynamic Properties
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