JoVE Journal
Engineering
Engineering
需要订阅 JoVE 才能查看此 内容.
章节
总结概括
The use of electron channeling contrast imaging in a scanning electron microscope to characterize defects in III-V/Si heteroexpitaxial thin films is described. This method yields similar results to plan-view transmission electron microscopy, but in significantly less time due to lack of required sample preparation.