Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Hyun Myung Kim; Gil Ju Lee; Min Seok Kim; Young Min Song

doi:10.3791/57502

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

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Engineering

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JoVE Journal Engineering

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

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09:59 min

June 23, 2018

DOI: 10.3791/57502-v

Hyun Myung Kim*¹, Gil Ju Lee*¹, Min Seok Kim¹, Young Min Song¹

¹School of Electrical Engineering and Computer Science,Gwangju Institute of Science and Technology

We present a detailed method to fabricate a deformable lateral NIPIN phototransistor array for curved image sensors. The phototransistor array with an open mesh form, which is composed of thin silicon islands and stretchable metal interconnectors, provides flexibility and stretchability. The parameter analyzer characterizes the electrical property of the fabricated phototransistor.

Our approach can help advance progress in the field of flexor semiconductor device fabrication. The main advantage of our fabrication procedure is it improves the electric current by current stabilate of the devices under deformation. Prepare a DUB silicon on insulator sample.

This sample is ready for silicon isolation in subsequent steps. This is a schematic representation of its layer structure. Gray represents silicon, green, silicon dioxide.

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