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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy
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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Article DOI: 10.3791/56861-v • 11:33 min • January 19th, 2018
January 19th, 2018 •
1,2, 1, 3,4,5, 1,2,6, 1, 2, 3,4, 1,2
1Department of Physics, University of Alberta, 2National Institute for Nanotechnology, National Research Council of Canada, Edmonton, 3Max Planck Institute for the Structure and Dynamics of Matter, 4Max Planck Institute for Solid State Research, 5Department of Physics and Astronomy, University of Manitoba, 6Joint Attosecond Science Laboratory, University of Ottawa

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Automatic Translation

We demonstrate an all-electronic method to observe nanosecond-resolved charge dynamics of dopant atoms in silicon with a scanning tunneling microscope.

Tags

Electronic Time-resolved Scanning Tunneling Microscopy Single Dopant Charge Dynamics Nanosecond-resolved Scanning Tunneling Microscopy Dopants In Silicon Nanotechnology Physics Tunneling Currents Magnetic Resonance Fast Dynamics Optics Integration Low Temperatures Ultra-high Vacuum Scanning Tunneling Microscopes Cryogenic Temperatures High Frequency Wiring Arbitrary Function Generator Pump-probe Experiments DC Bias Voltage
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