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Kvantificering af Hydrogen Koncentrationer i Surface og Interface-Lag og Bulk Materials gennem Dybde Profilering med kernereaktion Analysis
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Chapters
- 00:05Title
- 01:29Single Crystal Surface Preparation for Nuclear Reaction Analysis (NRA) in Ultra-high Vacuum
- 08:07Surface Hydrogen Nuclear Reaction Analysis Measurements
- 09:24Bulk and Interface Hydrogen Nuclear Reaction Analysis: Preparation and Measurement
- 11:02Results: Nuclear Reaction Analysis Hydrogen Depth Profiles for Single Crystal Palladium and from Silicon Dioxide Films on Silicon
- 12:50Conclusion
Vi illustrere anvendelsen af 1H (15 N, αγ) 12 C resonant kernereaktion analyse (NRA) for kvantitativt at evaluere densiteten af hydrogenatomer på overfladen, i volumenet, og ved en grænsefladelag af faste materialer. Den nær overfladen brint dybde profilering af en Pd (110) enkelt krystal og SiO 2 / Si (100) stakke beskrives.
