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-Plasma ondersteunde Moleculaire bundel epitaxie van N-polaire InAlN-barrière High-elektron-mobiliteit Transistors
JoVE Journal
Engineering
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JoVE Journal Engineering
Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
DOI:

10:31 min

November 24, 2016

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Chapters

  • 00:05Title
  • 00:53RF-assisted Plasma-assisted Molecular Beam Epitaxy (PAMBE) System and Sample Preparation
  • 04:36N-polar InAIN-barrier High-electron-mobility Transistor (HEMT) Growth
  • 08:03Results: N-polar InAIN-barriers High-electron-mobility Transistors Grown with PAMBE
  • 09:30Conclusion

Summary

Automatic Translation

Moleculaire bundel epitaxie wordt gebruikt om N-polar InAlN-barrier high-elektron-mobiliteit transistoren (HEMTs) groeien. Controle van de wafer voorbereiding, laag groeiomstandigheden en epitaxiale structuur resulteert in gladde, compositorisch homogene InAlN lagen en HEMTs die slecht ter been zo hoog als 1750 cm2 / V ∙ sec.

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