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N极性InAlN阻高电子迁移率晶体管的等离子体辅助分子束外延
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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
Please note that all translations are automatically generated.
Click here for the English version.
N极性InAlN阻高电子迁移率晶体管的等离子体辅助分子束外延
DOI:
10.3791/54775-v
•
10:31 min
•
November 24, 2016
•
Matthew T. Hardy
,
David F. Storm
,
D. Scott Katzer
,
Brian P. Downey
,
Neeraj Nepal
,
David J. Meyer
1
NRC Postdoctoral Scholar
,
Naval Research Laboratory
,
2
Electronics Science and Technology Division
,
Naval Research Laboratory
Chapters
00:05
Title
00:53
RF-assisted Plasma-assisted Molecular Beam Epitaxy (PAMBE) System and Sample Preparation
04:36
N-polar InAIN-barrier High-electron-mobility Transistor (HEMT) Growth
08:03
Results: N-polar InAIN-barriers High-electron-mobility Transistors Grown with PAMBE
09:30
Conclusion
Summary
Automatic Translation
English (Original)
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Automatic Translation
分子束外延用来生长N极性InAlN阻高电子迁移率晶体管(HEMT器件)。在光滑,组成均匀InAlN层和HEMT的晶圆准备控制层生长条件和外延结构的结果与流动性高达1750厘米
2
/ V∙秒。
Tags
Plasma-assisted Molecular Beam Epitaxy
N-polar InAlN-barrier High-electron-mobility Transistors
Semiconductor Materials
Wide Bandgap Transistors
Gallium Nitride Substrate
Outgassing
Substrate Transfer
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