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Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
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Engineering
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JoVE Journal Engineering
Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope

DOI:
10.3791/58272-v

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10:25 min

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September 14, 2018

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, , , , , ,
1Center for Functional Nanomaterials,Brookhaven National Laboratory

Chapters

  • 00:04Title
  • 01:03Sample Preparation for Resist Coating
  • 02:27Load Sample in STEM, Map Window Coordinates, and Perform High-Resolution Focusing
  • 04:54Expose Patterns Using an Aberration-Corrected STEM Equipped with a Pattern Generator System
  • 06:44Resist Development and Critical Point Drying
  • 08:09Results: Nanometer-Scale Lithographic Patterns in HSQ and PMMA (Positive and Negative Tone)
  • 09:14Conclusion

Summary

Automatic Translation

Automatic Translation

We use an aberration-corrected scanning transmission electron microscope to define single-digit nanometer patterns in two widely-used electron-beam resists: poly (methyl methacrylate) and hydrogen silsesquioxane. Resist patterns can be replicated in target materials of choice with single-digit nanometer fidelity using liftoff, plasma etching, and resist infiltration by organometallics.

Tags

Keywords: Electron-beam LithographyScanning Transmission Electron MicroscopeSTEMAberration-correctionNanometer ResolutionElectron Beam ResistPattern TransferNanoscale FabricationHSQ ResistSpin CoatingTEM ChipSample Preparation

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