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-Plasma ondersteunde Moleculaire bundel epitaxie van N-polaire InAlN-barrière High-elektron-mobiliteit Transistors
 
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-Plasma ondersteunde Moleculaire bundel epitaxie van N-polaire InAlN-barrière High-elektron-mobiliteit Transistors

Article doi: 10.3791/54775
November 24th, 2016

Summary November 24th, 2016

Please note that all translations are automatically generated.

Click here for the English version.

Moleculaire bundel epitaxie wordt gebruikt om N-polar InAlN-barrier high-elektron-mobiliteit transistoren (HEMTs) groeien. Controle van de wafer voorbereiding, laag groeiomstandigheden en epitaxiale structuur resulteert in gladde, compositorisch homogene InAlN lagen en HEMTs die slecht ter been zo hoog als 1750 cm2 / V ∙ sec.

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