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Plasmagestützte Molecular Beam Epitaxy von N-polar InAlN-Barriere Hochelektronenmobilität Transistoren
JoVE Journal
Engineering
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JoVE Journal Engineering
Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
DOI:

10:31 min

November 24, 2016

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Chapters

  • 00:05Title
  • 00:53RF-assisted Plasma-assisted Molecular Beam Epitaxy (PAMBE) System and Sample Preparation
  • 04:36N-polar InAIN-barrier High-electron-mobility Transistor (HEMT) Growth
  • 08:03Results: N-polar InAIN-barriers High-electron-mobility Transistors Grown with PAMBE
  • 09:30Conclusion

Summary

Automatic Translation

Molekularstrahlepitaxie verwendet wird N-polar InAlN-Barriere High-Elektronen-mobility transistors (HEMT) zu wachsen. Die Steuerung der Waferaufbereitung, Schichtwachstumsbedingungen und Epitaxie - Struktur ergibt glatte, homogene kompositorisch InAlN Schichten und HEMTs mit Mobilität so hoch wie 1750 cm 2 / V ∙ sec.

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