Login processing...

Trial ends in Request Full Access Tell Your Colleague About Jove
JoVE Journal

A subscription to JoVE is required to view this content.
You will only be able to see the first 2 minutes.

Click here for the English version


Article doi: 10.3791/54775
November 24th, 2016

Summary November 24th, 2016

Please note that all translations are automatically generated.

Click here for the English version.

分子線エピタキシーは、N極性のInAlNバリア高電子移動度トランジスタ(HEMTの)を成長させるために使用されます。 1,750 cm 2の/ V∙秒という高い移動度を有する滑らかな、組成的に均質のInAlN層とのHEMTのウエハ製剤の制御、層の成長条件とエピタキシャル構造をもたらします。

Read Article

Get cutting-edge science videos from JoVE sent straight to your inbox every month.

Waiting X
simple hit counter