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すべて電子ナノ秒分解走査型トンネル顕微鏡: 単一ドーパントの電荷ダイナミクスの調査を促進します。
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JoVE Journal
Engineering
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Please note that all translations are automatically generated.
Click here for the English version.
すべて電子ナノ秒分解走査型トンネル顕微鏡: 単一ドーパントの電荷ダイナミクスの調査を促進します。
DOI:
10.3791/56861-v
•
11:33 min
•
January 19, 2018
•
Mohammad Rashidi
2
,
Wyatt Vine
,
Jacob A.J. Burgess
4,5
,
Marco Taucer
2,6
,
Roshan Achal
,
Jason L. Pitters
,
Sebastian Loth
4
,
Robert A. Wolkow
2
1
Department of Physics
,
University of Alberta
,
2
National Institute for Nanotechnology
,
National Research Council of Canada, Edmonton
,
3
Max Planck Institute for the Structure and Dynamics of Matter
,
4
Max Planck Institute for Solid State Research
,
5
Department of Physics and Astronomy
,
University of Manitoba
,
6
Joint Attosecond Science Laboratory
,
University of Ottawa
Chapters
00:05
Title
00:52
Initial Setup of Microscope and Experiments
02:05
Preparation of the H-Si(100)-(2×1) Reconstruction
04:20
Assessing the Quality of the Pump-probe Pulses at the Tunnel Junction
06:32
Experiment 1: Time-resolved Scanning Tunneling Spectroscopy
07:55
Experiment 2: Time-resolved STM Measurements of Relaxation Dynamics
08:47
Experiment 3: Time-resolved STM Measurements of Excitation Dynamics
09:27
Results: Investigation of Single Dopant Change Dynamics
10:43
Conclusion
Summary
Automatic Translation
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Automatic Translation
走査型トンネル顕微鏡を用いたシリコン中のドーパント原子のナノ秒分解電荷ダイナミクスを観察するすべての電子方法を示す.
Tags
Nanosecond-resolved Scanning Tunneling Microscopy
Single Dopant Charge Dynamics
Time-resolved Scanning Tunneling Microscopy
Semiconductor Dopants
Tunneling Current
Ultra-high Vacuum
Cryogenic Temperatures
Arbitrary Function Generator
Radio Frequency Switches
Silicon Wafer
Sample Preparation
Tungsten Filament
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