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Journal / Engineering / 電解質ゲートによって…
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JoVE Journal Engineering
電解質ゲートによって WS2ナノデバイスにおける電子状態の電界制御
Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons
Journal (Engineering)
Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons
The Preparation of Electrohydrodynamic Bridges from Polar Dielectric Liquids
Journal (Engineering)
The Preparation of Electrohydrodynamic Bridges from Polar Dielectric Liquids
 
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電解質ゲートによって WS2ナノデバイスにおける電子状態の電界制御

Article DOI: 10.3791/56862-v • 10:36 min • April 12th, 2018
April 12th, 2018 •
1, 1, 2, 3,4, 1, 5, 1, 1,5
1Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, 2Materials Sciences Division, Lawrence Berkeley National Laboratory, 3Institute of Scientific and Industrial Research, Osaka University, 4Max Planck Institute for Solid State Research, 5RIKEN Center for Emergent Matter Science (CEMS)

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ここでは、電解質を用いた固体キャリア数を制御するためのプロトコルを提案する.

Tags

エンジニア リング、問題 134、電解質ゲート、電気二重層トランジスタ、インターカレーション、超伝導遷移金属ダイカルコゲナイド、TMDs、タングステンの二硫化物、WS2、カーボンナノ チューブ
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