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Journal / Engineering / シリコン上に半円筒空隙を有するゲルマニウムエピタキシャル層の転位低減に関する理論計算と実験的検証…
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JoVE Journal Engineering
シリコン上に半円筒空隙を有するゲルマニウムエピタキシャル層の転位低減に関する理論計算と実験的検証
High-Sensitivity Nuclear Magnetic Resonance at Giga-Pascal Pressures: A New Tool for Probing Electronic and Chemical Properties of Condensed Matter under Extreme Conditions
Journal (Engineering)
High-Sensitivity Nuclear Magnetic Resonance at Giga-Pascal Pressures: A New Tool for Probing Electronic and Chemical Properties of Condensed Matter under Extreme Conditions
Experimental Implementation of a New Composite Fabrication Method: Exposing Bare Fibers on the Composite Surface by the Soft Layer Method
Journal (Engineering)
Experimental Implementation of a New Composite Fabrication Method: Exposing Bare Fibers on the Composite Surface by the Soft Layer Method
 
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シリコン上に半円筒空隙を有するゲルマニウムエピタキシャル層の転位低減に関する理論計算と実験的検証

Article DOI: 10.3791/58897-v • 06:57 min • July 17th, 2020
July 17th, 2020 •
1, 2, 1, 1,3
1Department of Materials Engineering, The University of Tokyo, 2Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 3Department of Materials Science and Engineering, Massachusetts Institute of Technology

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シリコン上に半円筒空隙を有するゲルマニウムエピタキシャル層におけるねじ切り転位(TD)密度の低減について、理論計算と実験的検証が提案されています。像力によるTDと表面の相互作用に基づく計算、TD測定、TDの透過型電子顕微鏡観察を示します。

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工学、161号、シリコンフォトニクス、ゲルマニウム、Ge、結晶成長、選択的エピタキシャル成長、ねじ切り転位密度、像力、理論計算、化学気相成長、CVD、透過型電子顕微鏡、TEM
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