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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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JoVE Journal Engineering
Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

DOI:
10.3791/54775-v

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10:31 min

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November 24, 2016

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, , , , ,
1NRC Postdoctoral Scholar,Naval Research Laboratory, 2Electronics Science and Technology Division,Naval Research Laboratory

Chapters

  • 00:05Title
  • 00:53RF-assisted Plasma-assisted Molecular Beam Epitaxy (PAMBE) System and Sample Preparation
  • 04:36N-polar InAIN-barrier High-electron-mobility Transistor (HEMT) Growth
  • 08:03Results: N-polar InAIN-barriers High-electron-mobility Transistors Grown with PAMBE
  • 09:30Conclusion

Summary

Automatic Translation

Automatic Translation

Molecular beam epitaxy is used to grow N-polar InAlN-barrier high-electron-mobility transistors (HEMTs). Control of the wafer preparation, layer growth conditions and epitaxial structure results in smooth, compositionally homogeneous InAlN layers and HEMTs with mobility as high as 1,750 cm2/V∙sec.

Tags

Plasma-assisted Molecular Beam EpitaxyN-polar InAlN-barrier High-electron-mobility TransistorsSemiconductor MaterialsWide Bandgap TransistorsGallium Nitride SubstrateOutgassingSubstrate Transfer

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