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Method Article

Metal-Assisted Electrochemical Nanoimprinting of Porous and Solid Silicon Wafers

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DOI:

10.3791/61040

February 8th, 2022

In This Article

Summary

A protocol for metal-assisted chemical imprinting of 3D microscale features with sub-20 nm shape accuracy into solid and porous silicon wafers is presented.

Abstract

Metal-assisted electrochemical imprinting (Mac-Imprint) is a combination of metal-assisted chemical etching (MACE) and nanoimprint lithography that is capable of direct patterning 3D micro- and nanoscale features in monocrystalline group IV (e.g., Si) and III-V (e.g., GaAs) semiconductors without the need of sacrificial templates and lithographical steps. During this process, a reusable stamp coated with a noble metal catalyst is brought in contact with a Si wafer in the presence of a hydrofluoric acid (HF) and hydrogen peroxide (H2O2) mixture, which leads to the selective etching of Si at the metal-semiconductor contact interface. In this protocol, we discuss the stamp and substrate preparation methods applied in two Mac-Imprint configurations: (1) Porous Si Mac-Imprint with a solid catalyst; and (2) Solid Si Mac-Imprint with a porous catalyst. This process is high throughput and is capable of centimeter-scale parallel patterning with sub-20 nm resolution. It also provides low defect density and large area patterning in a single operation and bypasses the need for dry etching such as deep reactive ion etching (DRIE).

Introduction

Three-dimensional micro- and nanoscale patterning and texturization of semiconductors enables numerous applications in various areas, such as optoelectronics1,2, photonics3, antireflective surfaces4, super hydrophobic, and self-cleaning surfaces5,6 among others. Prototyping and mass-producing 3D and hierarchical patterns has been successfully accomplished for polymeric films by soft lithography and nanoimprinting lithography with sub-20 nm resolution. However, transferring such 3D polymeric patterns into ....

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Protocol

CAUTION: Use appropriate safety practices and personal protective equipment (e.g., lab coat, gloves, safety glasses, closed-toe shoes). This procedure utilizes HF acid (48% wt) which is an extremely hazardous chemical and requires additional personal protective equipment (i.e., a face shield, natural rubber apron, and second pair of nitrile gloves that covers the hand, wrists, and forearms).

1. Stamp preparation for Mac-imprint

  1. PDMS mold fabrication
    1. Prepare the RCA-1 solution by mixing deionized pure (DI) water and ammonium hydroxide in the glass beaker in a 5:1 ratio (volume). Place the beaker with ....

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Results

Scanning electron microscope (SEM) images, optical microscope scans (Figure 9), and atomic force microscopy (AFM) scans (Figure 10) were obtained in order to study the morphological properties of the Mac-Imprint stamps and imprinted Si surfaces. The cross-sectional profile of the imprinted solid Si was compared to that of the used porous Au stamp (Figure 10). Pattern transfer fidelity and porous Si g.......

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Discussion

Mac-Imprint stamps and prepatterned Si chips (p-type, [100] orientation, 1-10 Ohm∙cm) were prepared according to sections 1 and 2 of the protocol, respectively. The Mac-Imprint of prepatterned Si chip with stamps containing 3D hierarchical patterns was performed according to section 3 of the protocol (Figure 9). As shown in Figure 9a, different configurations of Mac-Imprint were applied: solid Si with solid Au (left), porous Si with solid .......

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Disclosures

We do not have anything to disclose.

Acknowledgements

We acknowledge Dr. Keng Hsu (University of Louisville) for insights regarding this work; University of Illinois's Frederick Seitz Laboratory and, in memoriam, staff member Scott Maclaren; Arizona State University's LeRoy Eyring Center for Solid State Science; and the Science Foundation Arizona under the Bis grove Scholars Award.

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Materials

List of materials used in this article
NameCompanyCatalog NumberComments
Acetone, >99.5%, ACS reagentSigma-Aldrich67-64-1CAUTION, chemical
Ammonium fluoride, >98%, ACS gradeSigma-Aldrich12125-01-8CAUTION, hazardous
Ammonium hydroxide solution, 28-30%, ACS reagentSigma-Aldrich1336-21-6CAUTION, hazardous
AZ 400K developerMicrochemicalsAZ 400KCAUTION, chemical
BenchMark 800 EtchAxicBenchMark 800Reactive ion etching
Chromium target, 2" x 0.125", 99.95% purityACI alloysADM0913Magnetron sputter chromium target
CTF 12Carbolite GeroC12075-700-208SNTube furnace
DesiccatorFisher scientific Chemglass life sciencesCG122611Desiccator
F6T5/BLBEikoF6T5/BLB 6WUV bulb
Gold target, 2" x 0.125", 99.99% purityACI alloysN/AMagnetron sputter gold target
Hotplate KW-4AHChemat TechnologyKW-4AHLeveled hotplate with uniform temperature profile
Hydrofluoric acid, 48%, ACS reagentSigma-Aldrich7664-39-3CAUTION, extremly hazardous
Hydrogen peroxide, 30%, ACS reagentFisher Chemical7722-84-1CAUTION, hazardous
Isopropyl alcohol, >99.5%, ACS reagentLabChem67-63-0CAUTION, chemical
MLP-50Transducer TechniquesMLP-50Load cell
Nitric acid, 70%, ACS gradeSAFC7697-37-2CAUTION, hazardous
NSC-3000Nano-masterNSC-3000Magnetron sputter
Potassium hydroxide, 45%, CertifiedFisher Chemical1310-58-3CAUTION, chemical
Rocker 800 vacuum pump, 110V/60HzRocker1240043Oil-free vacuum pump
Silicon master moldNILTSMLA_V1Silicon chip with pattern
Silicon wafers, prime gradeUniversity wafer783Si wafer
Silver target, 2" x 0.125", 99.99% purityACI alloysHER2318Magnetron sputter silver target
SP-300BioLogicSP-300Potentiostat
SPIN 150iSpincoatingSPIN 150iSpin coater
SPR 200-7.0 positive photoresistMicrochemSPR 220-7.0CAUTION, chemical
Stirring hotplateThermo scientific Cimarec+SP88857100General purpose hotplate
SU-8 2015 negative photoresistMicrochemSU-8 2015CAUTION, chemical
SYLGARD 184 Silicone elastomer kitDOW4019862CAUTION, chemical
T-LSR150BZaber TechnologiesT-LSR150B-KT04UMotorized linear stage
Trichloro(1H,1H,2H,2H-perfluorooctyl)silane (PFOCS), 97%Sigma-Aldrich78560-45-9CAUTION, hazardous

References

  1. Ning, H., et al. Transfer-Printing of Tunable Porous Silicon Microcavities with Embedded Emitters. ACS Photonics. 1 (11), 1144-1150 (2014).
  2. Hirschman, K. D., Tsybeskov, L., Duttagupta, S. P., Fauchet, P. M. Silicon-based light emitting devices integrated i....

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Tags

Porous Silicon Mac-ImprintSolid Silicon Mac-ImprintHydrofluoric Acid EtchingHydrogen Peroxide SolutionStamp Substrate AlignmentPDMS Mold PreparationSU-8 Photoresist CoatingGold Silver SputteringAtomic Force Microscopy