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硫化过渡金属膜制备大面积垂直2D 晶体杂化结构
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JoVE Journal
Engineering
Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Please note that all translations are automatically generated.
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硫化过渡金属膜制备大面积垂直2D 晶体杂化结构
DOI:
10.3791/56494-v
•
08:50 min
•
November 28, 2017
•
Chong-Rong Wu
2
,
Tung-Wei Chu
3
,
Kuan-Chao Chen
2
,
Shih-Yen Lin
2
1
Graduate Institute of Electronics Engineering
,
National Taiwan University
,
2
Research Center for Applied Sciences
,
Academia Sinica
,
3
Graduate Institute of Photonics and Optoelectronics
,
National Taiwan University
Chapters
00:05
Title
00:47
WS
2
/MoS
2
Vertical Heterostructure Growth
03:49
Transition Metal Dichalcogenide (TMD) Thin Film Transfer
06:21
Results: Growth Mechanisms and Transistor Performance
08:11
Conclusion
Summary
Automatic Translation
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Automatic Translation
通过 pre-deposited 过渡金属的硫化, 可以制备大面积和垂直2D 晶体杂化结构。本报告还演示了薄膜传输和器件制作程序。
Tags
2D Crystal Heterostructures
Vertical 2D Materials
Sulfurization
Transition Metal Films
Device Fabrication
RF Sputtering
Sapphire Substrate
Molybdenum Target
Sulfur Powder
Tube Furnace
Argon Gas
Molybdenum Disulfide
Tungsten Target
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