Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes

The overall goal of the synthetic method of combining a vapor transport deposition technique and nitrogen etching method in an atmospheric pressure system is to demonstrate fabrication of high-quality, large-sized single-layer materials on dielectric substrates. This method provides a general structure for the growth of two-dimensional lines the size of single-layer materials, such as as tin sulfide, germanium selenide, and indium telleride. The main advantage of this technique is that that large-size single-layer flakes can be grown on low-cost silicon dioxide silicon dielectrics with a vapor transport deposition technique and the nitrogen etching method in an atmospheric pressure system.

The implications of this technique extend towards the fabrication of other two-dimensional materials because the self-limiting nitrogen etching method can be beneficial to the formation of single layers on both. I first had the idea for this method when I carried out the growth of tungsten diselenide, tin selenide, high-production under nitrogen atmosphere and found that nitrogen etches the material. First, set the target temperature of a horizontal tube furnace to 560 degrees Celsius for one hour and run the furnace.