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U2O5 Film Preparation via UO2 Deposition by Direct Current Sputtering and Successive Oxidation and Reduction with Atomic Oxygen and Atomic Hydrogen
JoVE Journal
Chemistry
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JoVE Journal Chemistry
U2O5 Film Preparation via UO2 Deposition by Direct Current Sputtering and Successive Oxidation and Reduction with Atomic Oxygen and Atomic Hydrogen

U2O5 Film Preparation via UO2 Deposition by Direct Current Sputtering and Successive Oxidation and Reduction with Atomic Oxygen and Atomic Hydrogen

DOI:
10.3791/59017-v

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12:05 min

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February 21, 2019

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, , ,
1European Commission, Joint Research Centre,Directorate for Nuclear Safety and Security

Chapters

  • 00:04Title
  • 01:06The Labstation Modular Machine
  • 02:11Introduction of the Sample and Sample Holder into the Labstation
  • 03:10Transfer the Sample Holder to the Preparation Chamber
  • 04:03In situ Cleaning of the Sample Holder and Sample Holder Characterization
  • 05:39Deposition of a UO2 Thin Film
  • 06:50UO2 Sample Characterization
  • 07:38Oxidation of UO2 with Atomic Oxygen and Analysis of the UO3 Obtained
  • 08:52Reduction of UO3 by Atomic Hydrogen and Analysis of the U2O5 Obtained
  • 09:45Results: Identification of Uranium(V) in Thin Films
  • 10:51Conclusion

Summary

Automatic Translation

Automatic Translation

This protocol presents the preparation of U2O5 thin films obtained in situ under ultra-high vacuum. The process involves oxidation and reduction of UO2 films with atomic oxygen and atomic hydrogen, respectively.

Tags

Keywords: U2O5UO2Thin FilmSputteringOxidationReductionAtomic OxygenAtomic HydrogenUranium OxidesSurface CompositionX-ray Photoelectron SpectroscopyNitridesCarbidesUltra-high VacuumSample PreparationGold SubstrateLoading ChamberVacuum System

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