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U2O5 Film Preparation via UO2 Deposition by Direct Current Sputtering and Successive Oxidation and Reduction with Atomic Oxygen and Atomic Hydrogen
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U2O5 Film Preparation via UO2 Deposition by Direct Current Sputtering and Successive Oxidation and Reduction with Atomic Oxygen and Atomic Hydrogen

Article DOI: 10.3791/59017-v • 12:05 min • February 21st, 2019
February 21st, 2019 •
1, 1, 1, 1
1European Commission, Joint Research Centre, Directorate for Nuclear Safety and Security

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Summary
Automatic Translation

This protocol presents the preparation of U2O5 thin films obtained in situ under ultra-high vacuum. The process involves oxidation and reduction of UO2 films with atomic oxygen and atomic hydrogen, respectively.

Tags

U2O5 Film UO2 Deposition Direct Current Sputtering Oxidation Reduction Atomic Oxygen Atomic Hydrogen Thin Films Uranium Oxides Physical Chemical Properties Surface Interaction X-ray Electron Spectroscopy Lab Station Sample Surfaces
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