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Journal
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Chemistry
/
利用
uo2
沉积
制备 u2o5 薄膜, 利用原子氧和原子氢连续氧化还原
JoVE Journal
Chemistry
This content is Free Access.
JoVE Journal
Chemistry
U
2
O
5
Film Preparation via UO
2
Deposition by Direct Current Sputtering and Successive Oxidation and Reduction with Atomic Oxygen and Atomic Hydrogen
Please note that all translations are automatically generated.
Click here for the English version.
利用
uo2
沉积
制备 u2o5 薄膜, 利用原子氧和原子氢连续氧化还原
DOI:
10.3791/59017-v
•
12:05 min
•
February 21, 2019
•
Thomas Gouder
,
Frank Huber
,
Rachel Eloirdi
,
Roberto Caciuffo
1
European Commission, Joint Research Centre
,
Directorate for Nuclear Safety and Security
Chapters
00:04
Title
01:06
The Labstation Modular Machine
02:11
Introduction of the Sample and Sample Holder into the Labstation
03:10
Transfer the Sample Holder to the Preparation Chamber
04:03
In situ Cleaning of the Sample Holder and Sample Holder Characterization
05:39
Deposition of a UO
2
Thin Film
06:50
UO
2
Sample Characterization
07:38
Oxidation of UO
2
with Atomic Oxygen and Analysis of the UO
3
Obtained
08:52
Reduction of UO
3
by Atomic Hydrogen and Analysis of the U
2
O
5
Obtained
09:45
Results: Identification of Uranium(V) in Thin Films
10:51
Conclusion
Summary
Automatic Translation
English (Original)
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Automatic Translation
该协议介绍了在超高
真空下
原位
获得的 u2o5 薄膜的制备方法.
该过程涉及用原子氧和氢原子
氧化和还原 uo2 薄膜。
Tags
U2O5
UO2
Thin Film
Sputtering
Oxidation
Reduction
Atomic Oxygen
Atomic Hydrogen
Uranium Oxides
Surface Composition
X-ray Photoelectron Spectroscopy
Nitrides
Carbides
Ultra-high Vacuum
Sample Preparation
Gold Substrate
Loading Chamber
Vacuum System
Article
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