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Light Enhanced Hydrofluoric Acid Passivation

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

Article DOI: 10.3791/53614 09:15 min January 4th, 2016
January 4th, 2016



A RT liquid surface passivation technique to investigate the recombination activity of bulk silicon defects is described. For the technique to be successful, three critical steps are required: (i) chemical cleaning and etching of silicon, (ii) immersion of silicon in 15% hydrofluoric acid and (iii) illumination for 1 min.



Light Enhanced Hydrofluoric Acid Passivation Surface Passivation Silicon Defects High-purity Silicon Wafers Solar Cells Room Temperature Measurement Recombination Activity Low Concentrations DI Water Chemical Cleaning Procedures Solution Preparation Hydrofluoric Acid Preparation Setup And Equipment Calibration Silicon Wafer Cleaning Chemical Treatments
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