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Lys Enhanced Flussyre Acid Passivering: En følsom teknik til påvisning af Bulk Silicon Fejl
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Chapters
- 00:05Title
- 01:02Cleaning and Etching the Silicon Wafers
- 04:08Silicon Wafer Passivation and Photoconductive (PC) Measurement
- 07:08Results: Silicon Wafer Photoconductive Measurement after Surface Passivation
- 08:10Conclusion
En RT væskeoverfladen passivering teknik til at undersøge rekombinationsaktivitet af bulk silicium defekter er beskrevet. For teknikken at være en succes, er tre kritiske trin kræves: (i) kemisk rensning og ætsning af silicium, (ii) neddypning af silicium i 15% flussyre og (iii) belysning til 1 min.
Tags
Light Enhanced Hydrofluoric Acid PassivationSurface PassivationSilicon DefectsHigh-purity Silicon WafersSolar CellsRoom Temperature MeasurementRecombination ActivityLow ConcentrationsDI WaterChemical Cleaning ProceduresSolution PreparationHydrofluoric Acid PreparationSetup And Equipment CalibrationSilicon Wafer CleaningChemical Treatments
