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08:43 min
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November 07, 2016
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Diese Handschrift beschreibt den Biegeprozess eines organischen Einkristall-basierten Feldeffekttransistor eine betriebsfähige Vorrichtung zur elektronischen Eigenschaftsmessung aufrechtzuerhalten. Die Ergebnisse legen nahe, dass Biege verursacht Veränderungen in der molekularen Abstand im Kristall und somit in der Ladungssprungrate, die in flexible Elektronik wichtig ist.
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Cite this Article
Ho, M., Tao, Y. Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors. J. Vis. Exp. (117), e54651, doi:10.3791/54651 (2016).
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