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assistido por plasma Molecular Beam Epitaxy de N-polar InAlN barreiras Transistores de alta electron-mobility
 
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assistido por plasma Molecular Beam Epitaxy de N-polar InAlN barreiras Transistores de alta electron-mobility

Article doi: 10.3791/54775
November 24th, 2016

Summary November 24th, 2016

Please note that all translations are automatically generated.

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epitaxia de feixe molecular é usado para crescer N-polares transistores InAlN barreiras high-elétron-de mobilidade (HEMTs). Controle da preparação wafer, condições de crescimento camada e estrutura epitaxial resulta em camadas, InAlN de composição homogênea suaves e HEMTs com mobilidade tão alto quanto 1.750 cm2 / V ∙ sec.

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