Монослоя Связаться легирования кремния поверхностей и нанопроволок Использование фосфорорганических соединений

1Institute of Chemistry, The Hebrew University of Jerusalem, 2Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem
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Hazut, O., Agarwala, A., Subramani, T., Waichman, S., Yerushalmi, R. Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds. J. Vis. Exp. (82), e50770, doi:10.3791/50770 (2013).

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Abstract

Materials

Name Company Catalog Number Comments
High purity silicon wafers Topsil -
50 nm Si3N4/50 nm SiO2/Si wafers Silicon Valley Microelectronics -
Sulfuric Acid 98% BioLab 19550523
Hydrogen Peroxide 30% J.T. Baker 2190-03
Ammonium Hydroxide 25% J.T. Baker 6051
Ethanol J.T. Baker 8025
Mesitylene Sigma M7200
Dichloromethane Macron 4881-06
Tetraethyl methylenediphosphonate Aldrich 359181
Mineral Oil Sigma M3516
Hydrofluoric Acid 49% J.T. Baker 9564-06
Isopropanol J.T. Baker 9079-05
N-Methyl-2-pyrrolidone J.T. Baker 9397-05
AZ nLOF2020 AZ Electronic Materials nLOF 2020
AZ 726 MIF AZ Electronic Materials 726 MIF
Poly-L-Lysine solution Sigma P8920
Gold colloid solution Ted Pella 82160-80
RTA system AnnealSys MicroAS
4 point probe sheet resistance measurement system Jandel RM3-AR
Mask aligner Suss MA06
e-Beam evaporator VST TFDS-141E
Semiconductor analyzer Agilent B1500A
CVD system - - Home-built

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References

  1. Hazut, O., Agarwala, A., et al. Contact doping of silicon wafers and nanostructures with phosphine oxide monolayers. ACS Nano. 6, (11), 10311-10318 (2012).
  2. Hisamoto, D., Lee, W. -C. FinFET- A self-aligned double-gate MOSFET scalable to 20 nm. IEEE Trans. Electron Devices. 47, 2320-2325 (2000).
  3. Leung, G., Chui, C. O. Variability impact of random dopant fluctuation on nanoscale junctionless FinFETs. IEEE Electron Device Lett. 33, 767-769 (2012).
  4. Ho, J. C., Yerushalmi, R., et al. Wafer-scale, sub-5 nm junction formation by monolayer doping and conventional spike annealing. Nano Lett. 9, (2), 725-730 (2009).
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  8. Ho, J. C., Yerushalmi, R., Jacobson, Z. A., Fan, Z., Alley, R. L., Javey, A. Controlled nanoscale doping of semiconductors via molecular monolayers. Nat. Mater. 7, 62-67 (2008).
  9. Koren, E., Rosenwaks, Y., Allen, J. E., Hemesath, E. R., Lauhon, L. J. Nonuniform. Doping distribution along silicon nanowires measured by kelvin probe force microscopy and scanning photocurrent microscopy. Appl. Phys. Lett. 95, 092105 (2009).
  10. Wagner, R. S., Ellis, W. C. The vapor-liquid-solid mechanism of crystal growth and its application to silicon. Trans. Metall. Soc. AIME. 233, 1053-1064 (1965).
  11. Cui, Y., Lauhon, L. J., Gudiksen, M. S., Wang, J., Lieber, C. M. Diameter-controlled synthesis of single-crystal silicon nanowires. Appl. Phys. Lett. 78, (15), 2214-2216 (2001).

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