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-Plasma ondersteunde Moleculaire bundel epitaxie van N-polaire InAlN-barrière High-elektron-mobiliteit Transistors
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-Plasma ondersteunde Moleculaire bundel epitaxie van N-polaire InAlN-barrière High-elektron-mobiliteit Transistors

Article DOI: 10.3791/54775-v • 10:31 min • November 24th, 2016
November 24th, 2016 •
1, 2, 2, 2, 2, 2
1NRC Postdoctoral Scholar, Naval Research Laboratory, 2Electronics Science and Technology Division, Naval Research Laboratory

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Moleculaire bundel epitaxie wordt gebruikt om N-polar InAlN-barrier high-elektron-mobiliteit transistoren (HEMTs) groeien. Controle van de wafer voorbereiding, laag groeiomstandigheden en epitaxiale structuur resulteert in gladde, compositorisch homogene InAlN lagen en HEMTs die slecht ter been zo hoog als 1750 cm2 / V ∙ sec.

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Engineering moleculaire bundel epitaxie GaN III-nitriden InAlN high-elektron-mobiliteit transistoren halfgeleiders groei
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