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Nanofabrikation af gate-definerede GaAs / AlGaAs Lateral Quantum Dots
 
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Nanofabrikation af gate-definerede GaAs / AlGaAs Lateral Quantum Dots

Article DOI: 10.3791/50581
November 1st, 2013

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Summary November 1st, 2013

Please note that all translations are automatically generated.

Click here for the English version.

Denne artikel præsenterer en detaljeret fabrikation protokol for gate-definerede halvleder laterale kvante prikker på galliumarsenid heterostrukturer. Disse nanoskala enheder bruges til at fælde nogle elektroner til brug som kvante bits i kvanteinformation forarbejdning eller for andre mesoskopiske eksperimenter såsom kohærente konduktans målinger.

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