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Fremstilling af ensartede nanoskala hulrum via Silicon Direct Wafer Bonding
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Fremstilling af ensartede nanoskala hulrum via Silicon Direct Wafer Bonding

Article DOI: 10.3791/51179-v • 10:32 min • January 9th, 2014
January 9th, 2014 •
1, 2,3, 4, 5, 1
1Department of Physics, The State University of New York at Buffalo, 2Joint Quantum Institute, University of Maryland, 3The National Institute of Standards and Technology, 4Cryogenics and Fluids Branch, NASA Goddard Space Flight Center, 5HRL Laboratories

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En metode til permanent limning af to siliciumskiver for at realisere et ensartet kabinet er beskrevet. Dette omfatter wafer forberedelse, rengøring, RT limning, og udglødning processer. De resulterende bundne wafere (celler) har ensartethed af kabinettet ~ 1%1,2. Den resulterende geometri giver mulighed for målinger af indelukkede væsker og gasser.

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Fysik silicium direkte wafer limning nanoskala bundet wafers silicium wafer indelukkede væsker litografiske teknikker
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