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Fabrikasjon av ensartede nanoskala hulrom via silisium direkte wafer binding
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Fabrikasjon av ensartede nanoskala hulrom via silisium direkte wafer binding

Article DOI: 10.3791/51179-v • 10:32 min • January 9th, 2014
January 9th, 2014 •
1, 2,3, 4, 5, 1
1Department of Physics, The State University of New York at Buffalo, 2Joint Quantum Institute, University of Maryland, 3The National Institute of Standards and Technology, 4Cryogenics and Fluids Branch, NASA Goddard Space Flight Center, 5HRL Laboratories

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En metode for permanent binding av to silisiumskiver for å realisere et ensartet kabinett er beskrevet. Dette inkluderer wafer forberedelse, rengjøring, RT binding, og annealing prosesser. De resulterende limte wafers (celler) har ensartethet av kabinett ~ 1%1,2. Den resulterende geometrien muliggjør målinger av begrensede væsker og gasser.

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Fysikk Utgave 83 silisium direkte waferbinding nanoskala limte wafere silisiumskive begrensede væsker litografiske teknikker
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